Raman Scattering from14N2+and H2+Bombarded Silicon Surface

Autor:	V. P. Derenchuk, J. S. C. McKee, M. S. Mathur
Rok vydání:	1984
Předmět:	Surface (mathematics) Silicon Chemistry Analytical chemistry chemistry.chemical_element Atomic and Molecular Physics and Optics Analytical Chemistry Ion symbols.namesake Ion implantation symbols Wafer Irradiation Raman spectroscopy Spectroscopy Raman scattering
Zdroj:	Spectroscopy Letters. 17:165-180
ISSN:	1532-2289 0038-7010
DOI:	10.1080/00387018408062676
Popis:	The surface of a P type Si wafer was bombarded with 14N2 + and H2 + and the Raman spectrum of the implanted surface was obtained. The recorded spectrum not only confirms the information of various silicon-nitrogen, silicon-hydrogen, silicon-hydrogen-nitrogen-oxygen complexes but enables the identification of others.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6f7c08ee30242c5e26a407170565d540 https://doi.org/10.1080/00387018408062676 Zobrazit plný text záznamu