Peculiarities of Estimating the Optical Band Gap of Thin Films of Phase Change Memory Materials

Autor:	I. V. Sagunova, M. E. Fedyanina, Alexey Sherchenkov, A. O. Yakubov, A. V. Kukin, Petr Lazarenko, Yu. V. Vorobyov, Yu. S. Sybina, Sergey Kozyukhin
Rok vydání:	2020
Předmět:	Phase transition Materials science Band gap Annealing (metallurgy) business.industry General Engineering Atmospheric temperature range law.invention Reflection (mathematics) law Optoelectronics General Materials Science Thin film Crystallization Reflection coefficient business
Zdroj:	Inorganic Materials: Applied Research. 11:330-337
ISSN:	2075-115X 2075-1133
DOI:	10.1134/s2075113320020227
Popis:	The method of spectrophotometry with transmission and reflection spectra recording is used to study the peculiarities of estimating the optical band gap in Ge2Sb2Te5 thin films after annealing at different temperatures, in particular, in the temperature range of the phase transition. A significant influence of the spectrum processing algorithm on the obtained results is found. A comparison of experimental data shows that the sheet reisistance, reflection coefficient, and optical band gap change in different temperature ranges during the crystallization process. In particular, changes in the electrophysical properties continue after the completion of the modification of optical characteristics, which indicates the two-stage nature of the crystallization process in Ge2Sb2Te5 films.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6f662226bb5f97817add4b373426ccd8 https://doi.org/10.1134/s2075113320020227 Zobrazit plný text záznamu Full text from SpringerLink