Czochralski growth and characterization of piezoelectric single crystals with langasite structure: La3Ga5SiO14 (LGS), La3Ga5.5Nb0.5O14 (LGN), and La3Ga5.5Ta0.5O14 (LGT)
| Autor: | J. Schindler, M. Hengst, R.B. Heimann, R. Roewer, J. Bohm |
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| Rok vydání: | 1999 |
| Předmět: |
Materials science
business.industry Mineralogy Conductivity Condensed Matter Physics Piezoelectricity Characterization (materials science) Inorganic Chemistry Crystal Etch pit density Electrical resistivity and conductivity Etching (microfabrication) Materials Chemistry Optoelectronics Dislocation business |
| Zdroj: | Journal of Crystal Growth. 204:128-136 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/s0022-0248(99)00186-4 |
| Popis: | Crystals of LGS, LGN, and LGT of the enantiomorphous crystal class 32 were grown by the Czochralski technique in Z-, X-, and Y-pulling directions. The as-grown crystals exhibit high structural perfection as confirmed by etching with orthophosphoric acid, revealing an etch pit density and hence a dislocation density of about 103 cm−2. The specific electric resistances and the optical activities of the crystals were measured. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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