| Autor: |
Paul S. Martin, Gerard Harbers, Lou W. Cook, Andrew Y. Kim, Troy A. Trottier, S. A. Stockman, M.G. Craford, Serge L Rudaz, Y. C. Shen, M. Kueper, Gerd O. Mueller, Regina Mueller-Mach, Michael R. Krames, S. Subramanya, Nathan F. Gardner, Robert M Fletcher, D. Collins, Daniel A. Steigerwald, Jonathan J. Wierer, Jerome Chandra Bhat, Patrick N. Grillot, W. Götz, M. J. Ludowise, Mira S. Misra, Reena Khare |
| Rok vydání: |
2003 |
| Předmět: |
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| Zdroj: |
The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society. |
| DOI: |
10.1109/leos.2002.1159469 |
| Popis: |
There are numerous materials challenges involved in the production of high-efficiency III-nitride lasers and LEDs, some of which can be mitigated by epitaxy and device physics. The lack of a suitable lattice-matched substrate for epitaxy of AlInGaN films results in high dislocation densities and a large amount of residual strain in the deposited films. The role of the dislocations is not well-understood, although there is clear evidence that laser reliability is improved by reducing their density. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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