Chip-to-package interaction for a 90 nm Cu / PECVD low-k technology

Autor:	E. Duchesne, T. Ivers, C.-C. Yang, Clare Johanna Mccarthy, D. Hawken, Charles R. Davis, Timothy H. Daubenspeck, M. Cullinan, Larry Clevenger, J. Wright, T. Aoki, James J. Demarest, C. Das, Jon A. Casey, T. Shaw, Michael Lane, Daniel C. Edelstein, J. Nadeau-Filteau, Thomas E. Lombardi, A. Cowley, William F. Landers, David L. Questad, F. Beaulieu, X.-H. Liu, Wolfgang Sauter, Christopher D. Muzzy, Luc Guerin
Rok vydání:	2004
Předmět:	Wire bonding Materials science business.industry Copper interconnect Insulator (electricity) Dielectric Chip Chip-scale package visual_art visual_art.visual_art_medium Electronic engineering Optoelectronics Ceramic business Flip chip
Zdroj:	Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729).
Popis:	A summary of chip-to-package interaction (CPI) evaluations for a 90 nm PECVD low k technology will be discussed. This review will cover a 90 nm technology that uses Cu dual damascene interconnections with a SiCOH (K /spl sim/ 3.0) CVD BEOL insulator stack across multiple wirebond package types and flipchip C4 ceramic and organic packages. It will be shown that with the use of IBM's internally engineered SiCOH BEOL insulator, CPI is not an issue with this technology node.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6f471dd0cf5b4dde286b7a7fc3e854f0 https://doi.org/10.1109/iitc.2004.1345706 Zobrazit plný text záznamu