Interface-controlled integration of functional oxides with Ge
| Autor: | Alexander N. Taldenkov, Andrey M. Tokmachev, Oleg E. Parfenov, Igor A. Karateev, Vyacheslav G. Storchak, Ivan S. Sokolov, Dmitry V. Averyanov, Oleg A. Kondratev |
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| Rok vydání: | 2021 |
| Předmět: |
Diffraction
Materials science Spintronics Silicon business.industry education technology industry and agriculture Oxide chemistry.chemical_element Nanotechnology Heterojunction Germanium General Chemistry equipment and supplies Epitaxy chemistry.chemical_compound Semiconductor chemistry Materials Chemistry business |
| Zdroj: | Journal of Materials Chemistry C. 9:17012-17018 |
| ISSN: | 2050-7534 2050-7526 |
| DOI: | 10.1039/d1tc04225d |
| Popis: | Integration of oxides with semiconductor substrates merges functional properties of the two material systems. Significant progress has been made in controlled synthesis of crystalline oxides on silicon. Other semiconductors, such as germanium, are however lagging behind but would benefit from the range of functionalities provided by oxides. Here, we develop a synthetic route to epitaxial oxide/Ge heterostructures. Comparative analysis, employing diffraction and microscopy techniques, demonstrates distinct advantage of synthesis on the reconstructed Ge surface over traditional growth on metal reconstructions. In particular, a direct single-crystal-to-single-crystal contact between the ferromagnetic semiconductor EuO and Ge(001) has been designed and manufactured, a welcome development for semiconductor spintronics. The results mimicking those for silicon establish a general platform for integration of functional oxides with mature semiconductor technologies. |
| Databáze: | OpenAIRE |
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