Mechanically induced strain enhancement of metal–oxide–semiconductor field effect transistors

Autor:	L. A. Bosworth, R. E. Belford, B. M. Haugerud
Rok vydání:	2003
Předmět:	Electron mobility Materials science Strain engineering Silicon chemistry Saturation current MOSFET General Physics and Astronomy chemistry.chemical_element Silicon on insulator Strained silicon Field-effect transistor Composite material
Zdroj:	Journal of Applied Physics. 94:4102-4107
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.1602562
Popis:	Device characteristics and analysis are reported for strained silicon n- and p- channel partially depleted metal oxide semiconductor field effect transistors (MOSFETs) at 300 K. The devices were fabricated commercially on standard silicon-based silicon-on-insulator substrates and strain was applied mechanically after fabrication. Uniaxial tensile strain was applied within the elastic region using a back-end process and the relaxed structures were characterized under steady state conditions. Characterization was performed before and after straining. At ultralow strain levels (0.031%), pMOSFETs showed an increase in effective mobility μeff of 14.35% and an enhanced saturation current, Isat of 14.56%. An improvement in μeff of 15.19% and in Isat of 15.34% was observed for nMOSFETs strained by 0.039%. The latter die was debonded, released, and restressed at an elevated level of 0.052%. We observed an increased effective mobility μeff of 18.49% and Isat of 18.05%. Elastic uniaxial strain was fixed and characte...
Databáze:	OpenAIRE
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