Modeling of the hysteretic phenomena in RHEED intensity variation versus temperature for GaAs and InAs surfaces

Autor: Ákos Nemcsics, Jeno Takacs
Rok vydání: 2011
Předmět:
Zdroj: Semiconductors. 45:91-95
ISSN: 1090-6479
1063-7826
DOI: 10.1134/s1063782611010167
Popis: This paper describes a study of the reflection high energy electron diffraction intensity change against temperature for GaAs and InAs surfaces. The reflection high energy electron diffraction intensity variation against temperature shows different hysteretic characters for the two materials. To date, the explanations for these phenomena were also different for the two substances. Here, we put forward an explanation for these hysteretic phenomena in general terms, applicable to both materials by using the hyperbolic model of hysteresis for coupled systems. Experimental results presented in the paper are in good agreement with the model predictions, supporting the proposed common explanation.
Databáze: OpenAIRE