Offset reduction by modulation doping in abrupt heterojunction bipolar transistors
| Autor: | R. Azoulay, Alain Sibille, J. F. Palmier, J. C. Esnault |
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| Rok vydání: | 1989 |
| Předmět: |
Offset (computer science)
Materials science Input offset voltage Heterostructure-emitter bipolar transistor business.industry Bipolar junction transistor Transistor General Physics and Astronomy Mineralogy Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Band offset law.invention Condensed Matter::Materials Science law Physics::Accelerator Physics Optoelectronics business Common emitter |
| Zdroj: | Journal of Applied Physics. 66:442-444 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.343844 |
| Popis: | Conventional heterojunction bipolar transistors exhibit large δVCE offset voltages in common emitter characteristics: We experimentally show that the replacement of the large gap emitter by a thin modulation‐doped GaAlAs barrier in an otherwise all GaAs structure results in a large reduction of the offset, without degradation of the gain. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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