Facile Ferroelectric Phase Transition Driven by Si Doping in HfO2

Autor:	Hayoung Park, Jinhyeong Jo, Hyemi Yang, Hyun-Jae Lee, Jun Hee Lee, Kunwoo Park, Jungwon Park, Noejung Park
Rok vydání:	2020
Předmět:	Phase transition 010405 organic chemistry Semiconductor technology Chemistry Doping 010402 general chemistry 01 natural sciences Engineering physics Ferroelectricity 0104 chemical sciences Inorganic Chemistry Important research Orthorhombic crystal system Physical and Theoretical Chemistry
Zdroj:	Inorganic Chemistry. 59:5993-5999
ISSN:	1520-510X 0020-1669
Popis:	The recently discovered ferroelectricity in thin-film orthorhombic HfO2, which can be directly integrated into complementary metal–oxide semiconductor technology, has become an important research t...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6f0380da92c936b8c59d5e6d8b8a3a4f https://doi.org/10.1021/acs.inorgchem.9b03785 Zobrazit plný text záznamu