Resistive random-access memory with an a-Si/SiNx double-layer
| Autor: | Hui Tae Kwon, Yu Jeong Park, Min-Hwi Kim, Hyun-Seok Choi, Boram Kim, Sungjun Kim, Daehoon Wee, Won Joo Lee, Byung-Gook Park, Yoon Kim |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Resistive touchscreen Materials science business.industry Dangling bond Forming processes 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Thermal conduction 01 natural sciences Electronic Optical and Magnetic Materials Resistive random-access memory 0103 physical sciences Materials Chemistry Optoelectronics Current mode Electrical and Electronic Engineering 0210 nano-technology business Single layer |
| Zdroj: | Solid-State Electronics. 158:64-69 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2019.05.014 |
| Popis: | Resistive random-access memory (RRAM) with a Ni/SiNx/a-Si/p+-Si structure is presented. In contrast to RRAM devices based on high-k materials, the proposed Si-based device is more attractive and promising because the SiNx and a-Si layers have full compatibility with conventional complementary metal-oxidesemiconductor technology. The proposed device is compared to a control device with a single layer of SiNx. A conduction path containing Si dangling bonds (traps) can be generated in both the SiNx and a-Si layers. The conduction path in each layer can be controlled by the compliance current during the forming process. For high compliance current mode, the double-layer device has a higher ON/OFF ratio (∼104) and lower leakage current (∼10-9 A) than the single-layer device. For low compliance current mode, better non-linearity (∼103) can be obtained when a 1/2 read bias scheme is applied to the cross-point array. |
| Databáze: | OpenAIRE |
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