Dependence on doping type (p/n) of the water vapor oxidation of high‐gap AlxGa1−xAs

Autor:	F. A. Kish, K. C. Hsieh, S. J. Caracci, John Dallesasse, Steven A Maranowski, Nick Holonyak, G. E. Höfler
Rok vydání:	1992
Předmět:	X-ray absorption spectroscopy Physics and Astronomy (miscellaneous) Chemistry Scanning electron microscope Fermi level Doping Analytical chemistry Oxide Conductivity symbols.namesake chemistry.chemical_compound Electrical resistivity and conductivity symbols Water vapor
Zdroj:	Applied Physics Letters. 60:3165-3167
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.106730
Popis:	The oxidation (H2O vapor+N2 carrier gas, 425–525 °C) of high‐gap AlxGa1−xAs of different doping types (p and n) is characterized by oxide depth measurements utilizing scanning electron microscopy. The conductivity type is found to affect significantly the oxidation rate, with p‐type samples oxidizing more rapidly than n‐type samples. Classical oxidation theory is employed to explain these phenomena which are related to the position of the Fermi level in the samples.
Databáze:	OpenAIRE
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