| Popis: |
In the last decade, major advances in fabricating VLSI electronic devices have placed increasing demands on microlithography, the technology used to generate today's integrated circuits. In 1976, state-of-the-art devices contained several thousand transistors with minimum features of 5 to 6 μm. Today, they have several million transistors and minimum features of less than 0.7 μm. Within the next 10 to 15 years, a new form of lithography will be required that routinely produces features of less than 0.25 μm. Short-wavelength (deep-UV) photolithography and scanning electron-beam, X-ray, and scanning ion-beam lithography are the possible alternatives to conventional photolithography. However, each needs new resists and processes. When deep-UV photolithography is implemented, it will represent the first widespread use in manufacture of a lithographic technology that requires an entirely new resist technology. We describe the development of a resist system that meets all requirements of the deep-UV technique. |
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