Passivation studies of GaSb-based superlattice structures
| Autor: | Agata Jasik, Z. Orman, Jacek Szade, E. Papis-Polakowska, Andrzej Wawro, Jaroslaw Jurenczyk, J. Kaniewski, W. Rzodkiewicz |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Passivation business.industry Superlattice Metals and Alloys Analytical chemistry Photodetector Surfaces and Interfaces Chemical reaction Electron spectroscopy Surfaces Coatings and Films Electronic Optical and Magnetic Materials X-ray photoelectron spectroscopy Ellipsometry Materials Chemistry Optoelectronics Spectroscopy business |
| Zdroj: | Thin Solid Films. 567:77-81 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2014.07.044 |
| Popis: | The effect of (NH 4 ) 2 S-based chemical treatment on type-II InAs/GaSb superlattice has been investigated. X-ray photoelectron spectroscopy and spectroscopic ellipsometry together with the fractional derivative spectrum model have been used for surface and interface characterization. It has been shown that As 2 S 3 and In 2 S 3 compounds are created during 21% (NH 4 ) 2 S-based chemical treatment. Additionally, the reduction of leakage current of InAs/GaSb-based photodetectors has been observed. These results indicate that 21% (NH 4 ) 2 S chemical treatment seems to be a promising long term stable passivation method for InAs/GaSb superlattice-based photodetectors. |
| Databáze: | OpenAIRE |
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