Inverted p-down pin photodiode exceeding 70-GHz bandwidth featuring low operating bias voltage of 2 V
Autor: | Masahiro Nada, Yasuhiko Nakanishi, Toshihide Yoshimatsu, Nakajima Fumito, Hideaki Matsuzaki, Yamada Yuki, Kimikazu Sano, Shoko Tatsumi |
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Rok vydání: | 2020 |
Předmět: |
Materials science
Fabrication business.industry Biasing 02 engineering and technology 01 natural sciences Photodiode law.invention 010309 optics Responsivity 020210 optoelectronics & photonics Reliability (semiconductor) law Electric field 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Bandwidth (computing) Optoelectronics business Dark current |
Zdroj: | ECOC |
Popis: | We present a vertical-illumination pin photodiode (PD) with an inverted p-down structure, which is advantageous in fabrication, optical coupling, and dark-current suppression. The PD is designed to maximize bandwidth at low bias, resulting in 70.1-GHz bandwidth at 2 V with 0.61-A/W responsivity. |
Databáze: | OpenAIRE |
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