Inverted p-down pin photodiode exceeding 70-GHz bandwidth featuring low operating bias voltage of 2 V
| Autor: | Masahiro Nada, Yasuhiko Nakanishi, Toshihide Yoshimatsu, Nakajima Fumito, Hideaki Matsuzaki, Yamada Yuki, Kimikazu Sano, Shoko Tatsumi |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Fabrication business.industry Biasing 02 engineering and technology 01 natural sciences Photodiode law.invention 010309 optics Responsivity 020210 optoelectronics & photonics Reliability (semiconductor) law Electric field 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Bandwidth (computing) Optoelectronics business Dark current |
| Zdroj: | ECOC |
| Popis: | We present a vertical-illumination pin photodiode (PD) with an inverted p-down structure, which is advantageous in fabrication, optical coupling, and dark-current suppression. The PD is designed to maximize bandwidth at low bias, resulting in 70.1-GHz bandwidth at 2 V with 0.61-A/W responsivity. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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