Electron mobility enhancement in epitaxial multilayer Si‐Si1−xGexalloy films on (100) Si

Autor:	A. B. Jones, I. S. Gergis, H. M. Manasevit
Rok vydání:	1982
Předmět:	Electron mobility Materials science Physics and Astronomy (miscellaneous) Hall effect Alloy Doping engineering Analytical chemistry Chemical vapor deposition engineering.material Thin film Epitaxy Layer (electronics)
Zdroj:	Applied Physics Letters. 41:464-466
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.93533
Popis:	Enhanced Hall-effect mobilities have been measured in epitaxial (100)-oriented multilayer n-type Si/Si(1-x)Ge(x) films grown on single-crystal Si substrates by chemical vapor deposition. Mobilities from 20 to 40% higher than that of epitaxial Si layers and about 100% higher than that of epitaxial SiGe layers on Si were measured for the doping range 8 x 10 to the 15th to 10 to the 17th/cu cm. No mobility enhancement was observed in multilayer p-type (100) films and n-type (111)-oriented films. Experimental studies included the effects upon film properties of layer composition, total film thickness, doping concentrations, layer thickness, and growth temperature.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6edb743007ac6acc37c17cbdb9a94621 https://doi.org/10.1063/1.93533 Zobrazit plný text záznamu