Effect of Background Pressure on Deposition Rate and Crystallinity of Deposited Silicon in Non-Equilibrium Plasma Jet CVD

Autor:	Satoshi Nishida, Ryo Nodo, Hiroshi Muta, Shizuma Kuribayashi
Rok vydání:	2015
Předmět:	Deposition rate Crystallinity Materials science Chemical engineering Silicon chemistry General Chemical Engineering Plasma jet chemistry.chemical_element General Chemistry
Zdroj:	KAGAKU KOGAKU RONBUNSHU. 41:148-152
ISSN:	1349-9203 0386-216X
DOI:	10.1252/kakoronbunshu.41.148
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6ed88ddb89493e95a5c5d0972b2a0e3d https://doi.org/10.1252/kakoronbunshu.41.148 Zobrazit plný text záznamu