Enhancement of HfO2 Based RRAM Performance Through Hexagonal Boron Nitride Interface Layer
| Autor: | Yichen Fang, Zhihong Zhang, Yimao Cai, Jen-Chung Lou, Kaihui Liu, Li Wang, Jintong Xu, Ru Huang, Zongwei Wang, Yishao Chen |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Bilayer chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Resistive random-access memory chemistry Transmission electron microscopy 0103 physical sciences Electrode Optoelectronics 0210 nano-technology business Tin Boron Layer (electronics) Quantum tunnelling |
| Zdroj: | NVMTS |
| DOI: | 10.1109/nvmts.2018.8603102 |
| Popis: | In this paper, we investigated the electrical characteristics of RRAM with TiN/BNNF/HfO2/TiN crossbar structure. The hexagonal boron nitride nanofilm (BNNF) was transferred to the interface between the TiN top electrode and the HfO2 switching layer to form a BNNF/HfO2 bilayer structure. Transmission electron microscopy spectra confirms the BNNF exists between TiN and HfO2 layers. The TiN/BNNF/HfO2/TiN structure was observed to have several great performance as great uniformity and endurance by inserting an excellent property of the BNNF. The nonlinear current behavior in LRS current of the TiN/BNNF/HfO2/TiN crossbar structure can be attributed to the BNNF influence the current conduction mechanism owing to forming a high barrier height on TiN/HfO2 interface. |
| Databáze: | OpenAIRE |
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