Validity of the effective potential approach for the simulation of quantum confinement effects: A Monte-Carlo study
| Autor: | F. De Crecy, Philippe Dollfus, M-A. Jaud, Herve Jaouen, Sylvain Barraud, G. Le Carval |
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| Rok vydání: | 2006 |
| Předmět: |
Physics
Electron density Quantum Monte Carlo Monte Carlo method Frame (networking) Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Quantization (physics) Quantum dot Modeling and Simulation Dynamic Monte Carlo method Code (cryptography) Statistical physics Electrical and Electronic Engineering |
| Zdroj: | Journal of Computational Electronics. 5:171-175 |
| ISSN: | 1572-8137 1569-8025 |
| DOI: | 10.1007/s10825-006-8839-9 |
| Popis: | In the last years, different techniques have been proposed to include quantization effects in simulation of electron transport in nanoscale devices. The Effective Potential approach has been demonstrated as a possible correction method for describing these effects in Monte-Carlo device simulation. In this paper we discuss the numerical implementation and the actual ability of this approach to incorporating electrostatic quantum effects in the frame of an existing Monte-Carlo code (MONACO). A new methodology based on a Design-Of-Experiment is proposed for reproducing the Schrodinger-Poisson electron density profile. This original methodology allows to clearly highlight the validity limits of the Effective Potential correction for the description of quantization effects in a double-gate nMOSFET. |
| Databáze: | OpenAIRE |
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