| Popis: |
The influence of filament geometry on growth rate and morphology has been observed on diamond films deposited on single crystal silicon substrates in a hot filament CVD reactor. Single and dual helical W filaments having 5, 10, or 15 turns and CH4 :H2 ratios of 0.25%-1.00% were used. With single filaments the deposition rate was approximately proportional to the number of turns in the filaments produced lower deposition rates, compared to single filaments for depositions carried out at the same CH4 :H2 of 0.5%. Employing dual filaments doubled the area of uniform growth. Faceting of our films changed from (111) to (100), as the CH4 :H2 ratio was increased. |
