Noise and Multiplication Measurements in InSb Avalanche Photodiodes

Autor:	R. D. Baertsch
Rok vydání:	1967
Předmět:	Physics Avalanche diode business.industry General Physics and Astronomy Avalanche photodiode Avalanche breakdown Impact ionization Single-photon avalanche diode Ionization Optoelectronics Breakdown voltage Atomic physics business Electron ionization
Zdroj:	Journal of Applied Physics. 38:4267-4274
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.1709114
Popis:	Multiplication and noise measurements on InSb avalanche photodiodes have been made from 77° to 125°K. For the diodes studied, the electron ionization rate is much larger than the hole ionization rate and depends only weakly on the field for fields between 5×103 and 104 V/cm. The electron ionization rate increases and the breakdown voltage decreases with increasing temperature. The dependence of the ionization rate on field and temperature is explained by the weak dependence of the distribution function on field for high fields. The noise measurements are consistent with McIntyre's theory providing that the electron ionization rate is much greater than the hole ionization rate. A current‐controlled negative resistance is observed in InSb avalanche diodes at breakdown.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6ec90e2a071edc1192280b8ff6776c56 https://doi.org/10.1063/1.1709114 Zobrazit plný text záznamu