First-principles study of point defects in U3Si2: effects on the mechanical and electronic properties

Autor:	Menglu Li, Jutao Hu, Hengfeng Gong, Qisen Ren, Yehong Liao, Haiyan Xiao, Qihang Qiu, Shan Feng, Xiaotao Zu
Rok vydání:	2022
Předmět:	General Physics and Astronomy Physical and Theoretical Chemistry
Zdroj:	Physical Chemistry Chemical Physics. 24:4287-4297
ISSN:	1463-9084 1463-9076
DOI:	10.1039/d1cp04745k
Popis:	Under a radiation environment, the created defects in U3Si2 remarkably affect its mechanical properties.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6ec41593aaf7c2613236925e9bdcc7ac https://doi.org/10.1039/d1cp04745k Zobrazit plný text záznamu