AMS studies of the diffusion of chlorine in silicon wafers

Autor:	Sameer A. Datar, R.T.D. Teng, Harry E. Gove, James P. Lavine
Rok vydání:	1995
Předmět:	Nuclear and High Energy Physics Materials science Dopant Silicon Analytical chemistry chemistry.chemical_element chemistry Impurity Fluorine Chlorine Diffusion (business) Instrumentation Neutron activation Accelerator mass spectrometry
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 99:549-552
ISSN:	0168-583X
DOI:	10.1016/0168-583x(95)00215-4
Popis:	The diffusion of chlorine implanted in silicon wafers has been studied by neutron activation/accelerator mass spectrometry. Two implantation energies, 200 and 400 keV, and a range of implant doses from 1013 to 1015 atoms/cm2 were employed. The diffusion temperatures and times were also varied. While there is a distinct difference between the annealed and the as-implanted depth profiles for the lowest implant doses studied, at higher doses the chlorine seems to be virtually immobile. There is minimal indiffusion for the experimental conditions studied. However outdiffusion is substantial and rapid for anneal temperatures of 1100°C and above. This behavior is similar to that reported for fluorine in silicon at lower temperatures and quite different from that observed for dopants and other impurities.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6eb563e78ce123d06d5bd060368bec6a https://doi.org/10.1016/0168-583x(95)00215-4 Zobrazit plný text záznamu Full Text from ScienceDirect