Luminescence of narrow RIE etched In1−xGaxAs/InP and GaAs/Ga1−xAlxAs quantum wires
| Autor: | Bernard Sermage, D. Robein, L. L. Taylor, L. Birotheau, R. Azoulay, A. Izrael, J. Y. Marzin, L. Henry, F.R. Ladan, N. Roy, V. Thierry-Mieg, J. L. Benchimol |
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| Rok vydání: | 1992 |
| Předmět: |
Photoluminescence
Materials science business.industry Surfaces and Interfaces Nanosecond Condensed Matter Physics Spectral line Surfaces Coatings and Films Quantum dot Materials Chemistry Optoelectronics Photoluminescence excitation Metalorganic vapour phase epitaxy Reactive-ion etching Luminescence business |
| Zdroj: | Surface Science. 267:253-256 |
| ISSN: | 0039-6028 |
| DOI: | 10.1016/0039-6028(92)91131-t |
| Popis: | We present low temperature optical data obtained on narrow quantum wires, fabricated with reactive ion etching and MOCVD overgrowth, in both In1−xGaxAs/InP and GaAs/Ga1−xAlxAs systems. One-dimensional quantum confinement effects are observed in both cases for the lowest lateral sizes (Lx), in which carrier lifetimes remain of the order of one nanosecond. For In1−xGaxAs/InP wires (Lx down to 15 nm, quantum shifts of the photoluminescence peak (up to 30 meV) are observed. For GaAs/Ga1−xAlxAs wires (Lx down to 20 nm). We present photoluminescence excitation spectra showing additional lateral confinement effects, concerning mainly the polarization of the observed transitions. |
| Databáze: | OpenAIRE |
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