The Effect of Roughness Features on Mos Surface Electric Field and Fowler-Nordheim Tunneling Behavior

Autor:	Kwame N. Eason, C. R. Helms, Edwin C. Kan, Heng Chih Lin, Simon J. Fang, Toshiaki Yamanaka
Rok vydání:	1997
Předmět:	Field electron emission chemistry.chemical_compound Amplitude Materials science Condensed matter physics chemistry Gate oxide Electric field Surface roughness Oxide Surface finish Quantum tunnelling
Zdroj:	MRS Proceedings. 473
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-473-175
Popis:	For future CMOS GSI technology, Si/SiO2 interface micro-roughness becomes a non-negligible problem. Interface roughness causes fluctuations of the surface normal electric field, which, in turn, change the gate oxide Fowler-Nordheim tunneling behavior. In this research, we used a simple two-spheres model and a three-dimensional Laplace solver to simulate the electric field and the tunneling current in the oxide region. Our results show that both quantities are strong functions of roughness spatial wavelength, associated amplitude, and oxide thickness. We found that RMS roughness itself cannot fully characterize surface roughness and that roughness has a larger effect for thicker oxide in terms of surface electric field and tunneling behavior.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6eb13bef317b5ada25fef1b03a316563 https://doi.org/10.1557/proc-473-175 Zobrazit plný text záznamu Full text from SpringerLink