Structural Stability of (Ba,Sr)RuO 3 Electrodes on Hydrogen Annealing and Effect of interfacial Layers in (Ba,Sr)TiO 3 Thin Films
| Autor: | Sang-Shik Park, Soon-Gil Yoon, Eun-Suck Choi |
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| Rok vydání: | 2002 |
| Předmět: |
Materials science
Hydrogen Annealing (metallurgy) Analytical chemistry Mineralogy chemistry.chemical_element Dielectric Chemical vapor deposition Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Control and Systems Engineering Electrical resistivity and conductivity Electrode Materials Chemistry Ceramics and Composites Electrical and Electronic Engineering Thin film Forming gas |
| Zdroj: | Integrated Ferroelectrics. 47:31-40 |
| ISSN: | 1607-8489 1058-4587 |
| DOI: | 10.1080/713718271 |
| Popis: | (Ba,Sr)RuO 3 (BSR) electrodes were deposited on n-type Si (100) substrates by liquid-delivery metalorganic chemical vapor deposition (LDMOCVD) and their stability in a hydrogen ambient was investigated. BSR films showed the structural and morphological stability when annealed in hydrogen forming gas (4 % H 2 +96% balance N 2 ) temperatures of up to 500 ¯ . The abrupt increase of resistivity with increasing hydrogen annealing temperature can be attributed to oxygen loss in BSR films without phase change and was completely recovered by annealing at 700 ¯ in an O 2 ambient. The dielectric constant of the Pt/BSR/BST/Pt structures increased with increasing BSR interfacial layers. The dielectric constant of a BSR/BST/Pt capacitor with a 35 nm thick BST without top Pt electrode showed about 425. |
| Databáze: | OpenAIRE |
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