Optical gain in GaInNAs/GaAs multi-quantum well structures

Autor:	Henning Riechert, J. Kvietkova, Michael Hetterich, D.S. de Jauregui, A.Yu. Egorov
Rok vydání:	2003
Předmět:	Materials science business.industry Superradiance Edge (geometry) Emission intensity Exponential function Gallium arsenide chemistry.chemical_compound chemistry Optoelectronics Semiconductor quantum wells business Excitation Quantum well
Zdroj:	The Fourth International Conference on Advanced Semiconductor Devices and Microsystem.
DOI:	10.1109/asdam.2002.1088500
Popis:	We present the experimental investigation of the optical gain in GaInNAs/GaAs multi-quantum well structures using the variable stripe length method. The amplified spontaneous edge emission was measured at different excitation intensities and stripe lengths. We observed an exponential increase in the edge emission intensity with increasing excitation density. The obtained values of the optical gain are typically in the order of 20 cm/sup -1/.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6ea400728ad6eea2376a0148c834062b https://doi.org/10.1109/asdam.2002.1088500 Zobrazit plný text záznamu