Low-leakage diode string designs using triple-well technologies for RF-ESD applications

Autor:	Tung-Yang Chen, Jen-Kon Chen, Chiu-Hsiang Chou, Tien-Hao Tang, Shiao-Shien Chen
Rok vydání:	2003
Předmět:	Engineering Electrostatic discharge business.industry Bipolar junction transistor String (computer science) Electrical engineering Schottky diode Low leakage Electronic Optical and Magnetic Materials CMOS Optoelectronics Electrical and Electronic Engineering business Cmos process Diode
Zdroj:	IEEE Electron Device Letters. 24:595-597
ISSN:	1558-0563 0741-3106
Popis:	This letter proposes a novel low-leakage diode string designs using triple-well technologies in 0.18-/spl mu/m CMOS process for RF-electrostatic discharge (RF-ESD) applications. Based on the characteristics of the low-leakage current and low-capacitance in the triple-well diode string, it is convenient to apply it in RF-ESD (electrostatic discharge) protection circuit designs. As compared to the conventional p/sup +//n-well diode string, the substrate leakage current can be kept very small all the time before the triple-well diode string turns on. It results from the existence of the parasitic base-emitter tied p-n-p bipolar transistor in each triple-well diode.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6e953a6abfb97d92540e6449467c5dc3 https://doi.org/10.1109/led.2003.815938 Zobrazit plný text záznamu