Influence of Low Dielectric SiOF Film on Metal Oxide Semiconductor Field Effect Transistor Characteristics and Its Impact on Circuit Performance

Autor:	Jiro Ida, Atsushi Ohtomo, Masashi Yoshimaru
Rok vydání:	1998
Předmět:	Materials science business.industry Transconductance Transistor General Engineering Oxide General Physics and Astronomy Dielectric Capacitance law.invention chemistry.chemical_compound CMOS chemistry law Optoelectronics Field-effect transistor business Silicon oxide
Zdroj:	Japanese Journal of Applied Physics. 37:5843
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.37.5843
Popis:	A low dielectric fluorine-doped silicon oxide (SiOF) film, which was produced by adding C2F6 to the conventional chemical vapor deposited oxide, was applied to a 0.35 µm complementary metal oxide semiconductor (CMOS) and its influence on metal oxide semiconductor field effect transistor characteristics was analyzed. A shift of the transconductance was observed when the SiOF film was used as an intermediate dielectric and the Si3N4 film as the dielectric on the metal. An improvement in speed of 13% due to the SiOF film was experimentally confirmed under the condition where the transconductance does not show a shift. Using circuit simulations, the necessity for such low dielectric films as the SiOF film, on the scaling trend in the improvement of circuit performance, was clearly shown and was also emphasized from the point of view of power reduction. It was revealed that circuit speed and power consumption of 0.35 µm CMOS were degraded if the SiOF film was not used, because the improvement of the transistor performance did not overcome the increase in interconnect capacitance due to the increase in the adjacent interconnect capacitance component.
Databáze:	OpenAIRE
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