Photoluminescence from InN Nanorod Arrays with a Critical Size

Autor:	Shangjr Gwo, Yu Sheng Liu, Hyeyoung Ahn, Ke Yang Chang
Rok vydání:	2013
Předmět:	Materials science Indium nitride Photoluminescence business.industry General Engineering General Physics and Astronomy Electron Activation energy chemistry.chemical_compound Band bending chemistry Optoelectronics Nanorod Surface layer business Size dependence
Zdroj:	Applied Physics Express. 6:062103
ISSN:	1882-0786 1882-0778
Popis:	In this report, we investigated the rod size dependence of photoluminescence (PL) from vertically aligned indium nitride (InN) nanorod arrays grown on Si(111) substrates. Abnormal temperature dependence of the PL peak energy and the PL bandwidth was observed for InN nanorods with a critical diameter, which is of the same order of the surface electron accumulation layer (?20 nm). Exceptionally large activation energy of the nanorods with the critical diameter implies that holes within these narrow nanorods need to surpass the band bending energy near the surface in order to recombine with electrons accumulated in the surface layer.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6e921799cb592bf78a619a9fb7a1722a https://doi.org/10.7567/apex.6.062103 Zobrazit plný text záznamu