| Autor: |
E. Veuhoff, B. Marheineke, H. Heinecke |
| Rok vydání: |
1998 |
| Předmět: |
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| Zdroj: |
Journal of Crystal Growth. 188:183-190 |
| ISSN: |
0022-0248 |
| DOI: |
10.1016/s0022-0248(98)00095-5 |
| Popis: |
The doping of InP using Si and Zn has been studied for MOMBE growth on (1 0 0), (1 1 1)A, (1 1 1)B and for the overgrowth of nonplanar surfaces. The investigation of large area growth shows that Si acts as a donor on the three investigated surfaces. The free electron concentrations are always highest on (1 1 1)B and lowest on (1 1 1)A. Zn doping yields free hole concentrations which are highest on (1 1 1)A and lowest on (1 1 1)B. Consequently, co-doping using Si together with Zn yields a net n-type carrier concentration on (1 0 0) and (1 1 1)B surfaces, whereas a net p-type behaviour is found on (1 1 1)A surfaces within the same growth run. These results obtained from large area growth can be transferred to the overgrowth of localized (1 0 0)/(1 1 1)A steps on nonplanar substrates; using Si as dopant the free electron concentration on the (1 1 1)A facet decreases by a factor two compared with the (1 0 0) surface. Si–Zn co-doping leads to a drop in carrier concentration of at least one order of magnitude. Comparison with large area growth suggests that a lateral (p–n)-junction can be realized within a single growth step. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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