Defects in -implanted Si studied by slow positron implantation spectroscopy
| Autor: | Fuccio Cristiano, Paul G. Coleman, A. Nejim, P.L.F. Hemment, S A E Kuna |
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| Rok vydání: | 1998 |
| Předmět: |
Materials science
business.industry Annealing (metallurgy) Semiconductor materials Alloy Radiochemistry engineering.material Condensed Matter Physics Crystallographic defect Electronic Optical and Magnetic Materials Overlayer Ion implantation Positron Materials Chemistry engineering Optoelectronics Electrical and Electronic Engineering business Spectroscopy |
| Zdroj: | Semiconductor Science and Technology. 13:394-398 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/13/4/007 |
| Popis: | Slow positron implantation spectroscopy has been applied to the investigation of point defects formed during the synthesis of buried SiGe alloy layers in Si by high-dose implantation and post-amorphization with . It is seen that omitting the post-amorphization stage prior to annealing leaves a damaged layer, containing open volume defects, extending beyond the -implanted overlayer. Provided that the Ge dose is low enough to allow planar crystal regrowth, post-amorphization appears to inhibit defect formation. Samples implanted with higher doses contain as-yet unidentified defects. |
| Databáze: | OpenAIRE |
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