Ultrafast energy loss of electrons in p‐GaAs

Autor:	R. A. Höpfel, N. Nintunze, R. Rodrigues-Herzog, N. E. Hecker, M. Sailer, Mohamed A. Osman
Rok vydání:	1995
Předmět:	Photoluminescence Materials science Semiconductor Physics and Astronomy (miscellaneous) Scattering business.industry Electron energy loss spectroscopy Femtosecond Doping Relaxation (NMR) Electron Atomic physics business
Zdroj:	Applied Physics Letters. 67:264-266
ISSN:	1077-3118 0003-6951
Popis:	We investigated the ultrafast energy relaxation of photoexcited minority electrons in highly doped p‐GaAs by means of femtosecond time resolved luminescence (Δt
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6e6841715600a3325173e5d7367f5664 https://doi.org/10.1063/1.114777 Zobrazit plný text záznamu