Influence of primary ion beam irradiation conditions on the depth profile of hydrogen in tantalum film
| Autor: | Satoshi Denda, Tsutomu Asakawa, Keiichi Miyairi, D. Nagano |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Hydrogen Ion beam Tantalum Analytical chemistry General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films Ion beam irradiation chemistry Deuterium Irradiation Sample chamber Beam (structure) |
| Zdroj: | Applied Surface Science. 255:1387-1390 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2008.05.042 |
| Popis: | In order to confirm the possibility that hydrogen in Ta film migrates during SIMS measurement, the influence of primary ion beam irradiation conditions on the depth profile of hydrogen in a Ta film was investigated. Deuterium implanted in a Ta2O5/Ta/Ta2O5 structure was analyzed using Cs+ irradiation interruption. The result shows that hydrogen was discharged from the Ta film to the vacuum of the sample chamber during SIMS measurements with a Cs+ ion beam. The deuterium profile of the Ta film analyzed with an O2+ primary ion beam differed from those with Cs+ or Ar+ irradiations, and it depended on the incidence angle of the O2+ beam. According to these results, we propose a model where the hydrogen is discharged from Ta films to the vacuum of the sample chamber when Ta2O5 film is removed with Cs+ or Ar+ beam irradiation, but the hydrogen is not discharged when Ta2O5 film is formed on the Ta surface using O2+ primary beam irradiation. |
| Databáze: | OpenAIRE |
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