Dielectric Modulated Schottky Barrier TFET for the Application as Label-Free Biosensor
| Autor: | Sumit Kale, N. K. Hema Latha |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
chemistry.chemical_classification Materials science business.industry Schottky barrier Biomolecule Gate dielectric Charge density 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials chemistry Modulation 0103 physical sciences Optoelectronics Current (fluid) 0210 nano-technology business Sensitivity (electronics) |
| Zdroj: | Silicon. 12:2673-2679 |
| ISSN: | 1876-9918 1876-990X |
| DOI: | 10.1007/s12633-019-00363-7 |
| Popis: | This paper reported a dielectric modulated (DM) Schottky Barrier (SB) TFET (DM SB TFET) as label free biosensor applications. In a proposed device, we have created a nanogap cavity within the gate dielectric near the source end for sensing biomolecules. Therefore, the modulation of the SB width at the source end occurs due to presence of biomolecules in the form of different dielectric material used to fill the nanogap cavity. Hence, the current flow from source to drain is highly sensitive to the change in properties of dielectric materials. Here, we have investigated the performance of the proposed device in terms of its sensing capability by variation in dielectric constant and, charge density. Also, the performance of the device is observed for different cavity length and, thickness for different drain and source bias. Results show high sensitivity in terms of change in drive current of the device for the variation in the dielectric constant and charge density. Simulations have been performed by the two dimensional SILVACO ATLAS device simulator. |
| Databáze: | OpenAIRE |
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