A 75–110 GHz Sis Mixer With Integrated Tuning and Coupled Gain

Autor: A. H. Worsham, P. F. Goldsmith, N. R. Erickson, Daniel E. Prober, Dag Winkler, N. G. Ugras
Rok vydání: 1991
Předmět:
Zdroj: Nonlinear Superconductive Electronics and Josephson Devices ISBN: 9781461367192
DOI: 10.1007/978-1-4615-3852-3_6
Popis: A broadband waveguide SIS (superconductor-insulator-superconductor) mixer with no adjustable mechanical tuning elements for the 75–110 GHz band was constructed and tested. The design is a demonstration of a prototype receiver element in a focal plane array receiver. The large instantaneous bandwidth was accomplished with a broadband waveguide-to-microstrip transition and a scale-modeled microstripline circuitry. The transition to microstripline consisted of a waveguide single ridge 4-step Chebychev transformer. The last step of the ridge connected the waveguide to the microstripline circuit, which contained the SIS element in parallel with a thin film tuning inductor. The operation was double-sideband (DSB). The typical DSB mixer noise temperature, as measured between 79.5 and 110 GHz, was about 35 to 50 K at band center increasing to about 50–60 K at the band edges. The lowest mixer noise we obtained was 20 K at 80 GHz for a single untuned junction. For some junction geometries, gain was also observed between 80 to 110 GHz, with a maximum of +3 dB (DSB) at 100 GHz. No impedance transformers were used on the intermediate frequency (if) side. For several devices, negative dynamic resistance was observed on the first photon induced step below the gap.
Databáze: OpenAIRE