Anomalous doping behavior ofinsituboron‐doped polycrystalline silicon deposited by ultrahigh vacuum chemical vapor deposition
| Autor: | Jandel Lin, P. J. Wang, Horng-Chih Lin, Chih‐Yeh Chao, Ray‐Chern Deng, Hsiao-Yi Lin, Chun-Yen Chang, Tan Fu Lei |
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| Rok vydání: | 1993 |
| Předmět: |
inorganic chemicals
Materials science Physics and Astronomy (miscellaneous) Silicon Doping Analytical chemistry chemistry.chemical_element Mineralogy Chemical vapor deposition engineering.material Crystallinity Polycrystalline silicon chemistry engineering Deposition (phase transition) Surface layer Boron |
| Zdroj: | Applied Physics Letters. 63:1525-1527 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.110737 |
| Popis: | The deposition of in situ heavily boron‐doped polycrystalline silicon (poly‐Si) films was studied using an ultrahigh vacuum/chemical vapor deposition system. Fully activated carrier concentrations up to 3×1020 cm−3 were obtained for the as‐deposited films grown at 550 °C. For boron concentration beyond this level, the crystallinity of poly‐Si films degraded with increasing boron concentration, which resulted in an anomalous rise in resistivity. This crystallinity degradation occurred at a higher rate for films grown on a SiO2 surface than those grown on an undoped poly‐Si surface. It is attributed to the preferential adsorption of boron atoms on the SiO2 surface. Under a high B2H6 flux condition, a large amount of boron atoms would accumulate on the SiO2 surface before the formation of Si nuclei, and thus disturbs the subsequent film deposition and grain growth processes. |
| Databáze: | OpenAIRE |
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