Analysis of high-kpassivation-layer effects on buffer-related breakdown and current collapse in AlGaN/GaN HEMTs
| Autor: | Yoshiki Satoh, Kazushige Horio, Hideyuki Hanawa, A. Nakajima |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Passivation business.industry General Engineering Analytical chemistry General Physics and Astronomy Relative permittivity Buffer (optical fiber) Electric field Breakdown voltage Optoelectronics Current (fluid) business Layer (electronics) High-κ dielectric |
| Zdroj: | Japanese Journal of Applied Physics. 54:031002 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | We analyze breakdown characteristics and current collapse in AlGaN/GaN HEMTs, with the passivation layer’s relative permittivity er as a parameter. It is shown that the off-state breakdown voltage is considerably enhanced by introducing a high-k passivation layer because the electric field at the drain edge of the gate is weakened and the buffer leakage current is reduced. The breakdown voltage in the high-er region increases when the gate voltage is changed from −8 to −10 V, because the buffer leakage current is reduced. It is also shown that drain lag and current collapse in AlGaN/GaN HEMTs could be reduced by introducing a high-k thick passivation layer, because the electric field at the drain edge of the gate is reduced, leading to less electron injection into the buffer layer and weaker buffer trapping effects. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|