An introduction on microscopic-hyperspectral imaging for GaN-based LED investigation
Autor: | Yue Lin, Zhangbao Peng, Yi Tu, Zhong Chen, Tingzhu Wu, Yao Xiao, Yijun Lu |
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Rok vydání: | 2018 |
Předmět: |
010302 applied physics
Materials science Microscope Pixel business.industry Hyperspectral imaging 02 engineering and technology 021001 nanoscience & nanotechnology Chip 01 natural sciences Characterization (materials science) law.invention Optics law 0103 physical sciences RGB color model 0210 nano-technology business Energy (signal processing) Light-emitting diode |
Zdroj: | Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII. |
DOI: | 10.1117/12.2281120 |
Popis: | We adapt the hyperspectral imaging technique for detecting the spatially-resolved electroluminescence of GaNbased light-emitting diodes. Featuring a hyperspectral camera and a microscope, this microscopic-hyperspectral imaging (MHI) capture the image of chip surface within single exposure. Each pixel of MHI image contains the EL spectrum over the visible range, instead of mere RGB intensities as images of regular cameras do. The spatially-resolved EL information can be further processed into multiple representations, e.g. mappings of intensity, peak energy, etc., which allow us to analysis the lateral variations in the key optical parameters from different aspects. In this work, we present a demo of the application of MHI on LED measurement. For GaN green LEDs which are being subjected to high-current stress, we take the MHI images on several aging stages. The evolutions on the EL mappings recover the changes in injection lateral distributions, a possible result of the persistent interplay between carriers and crystalline imperfections. The spatially-resolved EL mapping provides a new tool for studying the carrier-lattice dynamics, as a promising complement to the current optical characterization. |
Databáze: | OpenAIRE |
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