Ohmic Contacts to Gallium Nitride-Based Structures

Autor:	A. S. Ionov, A. V. Zhelannov, B. I. Seleznev, D. G. Fedorov
Rok vydání:	2020
Předmět:	010302 applied physics Materials science business.industry Heterojunction Gallium nitride 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry.chemical_compound Ion implantation chemistry 0103 physical sciences Optoelectronics 0210 nano-technology business Ohmic contact
Zdroj:	Semiconductors. 54:317-321
ISSN:	1090-6479 1063-7826
DOI:	10.1134/s1063782620030197
Popis:	Studies of the characteristics of ohmic contacts to epitaxial and ion-doped gallium-nitride layers, based on the Cr/Pt/Au metallization system, are reported. The possibility of forming low-resistance contacts without the application of high-temperature treatment is shown. It is demonstrated, for AlGaN/GaN-based heterostructures, that the characteristics of Ti/Al/Ni/Au ohmic contacts are improved upon using ion implantation through a silicon-dioxide mask.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6e3dd4625fd3ef14db43f3804524fdd3 https://doi.org/10.1134/s1063782620030197 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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