A novel capacitor technology based on porous silicon
| Autor: | Hans Reisinger, Andreas Spitzer, Volker Lehmann, Wolfgang Hönlein, H. Wendt, Josef Willer |
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| Rok vydání: | 1996 |
| Předmět: |
Electrolytic capacitor
Materials science Equivalent series resistance Silicon business.industry Metals and Alloys chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY Surfaces and Interfaces Capacitance Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Polymer capacitor Capacitor Operating temperature chemistry Hardware_GENERAL law Hardware_INTEGRATEDCIRCUITS Materials Chemistry Optoelectronics Capacitance probe business |
| Zdroj: | Thin Solid Films. 276:138-142 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/0040-6090(95)08038-4 |
| Popis: | A capacitor based on an electrochemically etched macroporous silicon substrate and a layered dielectric (ONO) is presented. This solid-state technology allows us to realize values of specific capacitance which so far could only be reached by electrolytic capacitors. The dependence of the capacitance on temperature, frequency, applied bias and time of operation is found to be negligible. Due to a low series resistance and a operating temperature of at least 200 °C the device withstands high a.c. currents. Being a silicon chip, the capacitor is fully compatible with today's surface mounted device and multi-chip module technologies. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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