In-situ reflectance monitoring during MOCVD of AlGaN
| Autor: | J. Han, Mark V. Weckwerth, Robert M. Biefeld, T. B. Ng |
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| Rok vydání: | 1998 |
| Předmět: |
Solid-state physics
business.industry Chemistry Alloy Analytical chemistry Chemical vapor deposition engineering.material Condensed Matter Physics Electronic Optical and Magnetic Materials Scientific method Thin-film interference Materials Chemistry engineering Optoelectronics Metalorganic vapour phase epitaxy Growth rate Electrical and Electronic Engineering Thin film business |
| Zdroj: | Journal of Electronic Materials. 27:190-195 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-998-0385-8 |
| Popis: | We report in-situ optical reflectance monitoring during the metalorganic chemical vapor deposition (MOCVD) growth of (Al)GaN. In addition to the well-known thin film interference effect which enables a real-time determination of growth rate, we show that several insights about the MOCVD growth process can be gained by using this simple yet powerful technique. Illustrations from a variety of applications for in-situ reflectance monitoring, specifically the study of growth evolution, the control of alloy fractions, and the use of growth rate to gauge surface kinetics and gas injection will be reported. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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