Investigation of the thermal annealing effect on the optical, thermal and electrical properties of Sn2Sb2S5 evaporated thin films

Autor: S. Alaya, Y. Fadhli, M.A. Wederni, A. Mami, Kamel Khirouni, N. Yacoubi, N. Bennaji
Rok vydání: 2020
Předmět:
Zdroj: Optical and Quantum Electronics. 52
ISSN: 1572-817X
0306-8919
DOI: 10.1007/s11082-020-2250-9
Popis: Sn2Sb2S5 materials were synthesized by thermal evaporation using earth-abundant tin, antimony and sulfur elements. The effect of annealing temperature on structural, morphological, optical, thermal and electrical characterization was obtained using many techniques. The deposited films were annealed in air for 1 h at 100 °C and 300 °C. X-ray diffraction analysis reveals that while as-deposited films are amorphous, a crystallized phase, with an orthorhombic crystalline structure, appears after annealing. Via the photothermal deflection spectroscopy, the sub-bandgap energy decreased from 1.98 to 1.75 eV with rising the annealing temperature. Besides, static and dynamic thermal properties of as deposited and annealed Sn2Sb2S5 thin films were measured using electropyroelectric method. It was observed that an increase (40.5–46.5 W m−1 K−1) was found for the thermal conductivity values by increasing annealing temperature, while thermal diffusivity decreases from 12.1 × 10−6 to 9.31 × 10−6 m2 s−1. Moreover, Nyquist spectra performance in the temperature range 300–540 K revealed the presence of a relaxation phenomenon in the microstructure of the studied sample. In addition, the level of the peaks is crashed with temperature, showing that the charge carriers are thermally activated. Finally, Sn2Sb2S5 thin film annealed at 300 °C was found the best sample for use in optoelectronic and solar cell devices. This work suggests a low cost promising compound for scalable synthesis of Sn2Sb2S5 thin films for solar cell and photovoltaic applications.
Databáze: OpenAIRE
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