Design on ESD robustness of source-side discrete distribution in the 60-V high-voltage nLDMOS devices
| Autor: | Jia-Ming Lin, Kuei-Jyun Chen, Chih-Ying Yen, Shen-Li Chen, Chih-Hung Yang, Yi-Cih Wu |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry 020208 electrical & electronic engineering Electrical engineering Thyristor High voltage 02 engineering and technology 01 natural sciences Robustness (computer science) 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Probability distribution business |
| Zdroj: | ICCE-TW |
| DOI: | 10.1109/icce-tw.2016.7521041 |
| Popis: | The electrostatic-discharge (ESD) protection capability of HV nLDMOS devices with the source-side engineering by a TSMC 0.25μm 60-V is investigated in this paper. It can be found that a pure nLDMOS device has a poor anti-ESD ability (It2 = 1.833A). At the same time, if an nLDMOS was embedded with an SCR npn-(pnp-) arranged type in the drain-side, the corresponding secondary breakdown-current values are promoted 19.4% (24.8%) as comparing with a traditional nLDMOS. Furthermore, if the source discrete methodology is applied for the nLDMOS-embedded SCR npn-(pnp-) arranged type, the maximum secondary breakdown current value are promoted 24.1% (>281.9%). Finally, it can be concluded that a discrete distribution in the source region of a pure nLDMOS will upgrade the anti-ESD capability effectively, and it is especially for the nLDMOS-SCR pnp-arranges type. |
| Databáze: | OpenAIRE |
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