Ultra-high current gain InGaAsP/InP heterojunction bipolar transistor
| Autor: | Teruhito Matsui, Hiroshi Sugimoto, T. Ohishi, K. Ohtsuka, Yuji Abe |
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| Rok vydání: | 1990 |
| Předmět: |
Materials science
Fabrication business.industry Heterojunction bipolar transistor Bipolar junction transistor Gallium arsenide Multiple exciton generation chemistry.chemical_compound chemistry Optoelectronics Breakdown voltage Electrical and Electronic Engineering Current (fluid) business Layer (electronics) |
| Zdroj: | Electronics Letters. 26:392 |
| ISSN: | 0013-5194 |
| DOI: | 10.1049/el:19900256 |
| Popis: | A maximum DC current gain of 112000 was obtained by a double-layer base HBT with a thin base layer of 0.1 μm thickness. A breakdown voltage with a common-emmitter configuration was found to be 1.3 V, which is smaller than for conventional HBTs owing to the ultrahigh current gain and a carrier multiplication at a base-collector junction. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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