From MOSFETs to Ambipolar Transistors: Standard Cell Synthesis for the Planar RFET Technology
| Autor: | Jürgen Becker, Tillmann Krauss, Johannes Pfau, Maximilian Reuter, Klaus Hofmann |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Standard cell Adder Transistor Nanowire Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention Operating temperature Transistor count law Logic gate 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Electronic engineering Electrical and Electronic Engineering 0210 nano-technology Electronic circuit |
| Zdroj: | IEEE Transactions on Circuits and Systems I: Regular Papers. 68:114-125 |
| ISSN: | 1558-0806 1549-8328 |
| Popis: | Reconfigurable FETs (RFETs) are ambipolar transistors featuring the ability to conduct both electrons and holes, which is often achieved through the use of silicon nanowires or similar gate-all-around topologies. In this article, we present initial results for standard cell synthesis based on our planar RFET device, featuring top-down planar silicon based technology, lower fabrication complexity than nanowire approaches and a high operating temperature robustness. We first introduce the device physics by explaining the structure and the operating principle on device level. We also summarize recent device optimizations to increase drive current and achieve symmetry between N- and P-type conduction. Next to CMOS-style standard cells, we present a reduced transistor count XOR cell and analyze timing. Transient simulations are performed entirely in TCAD to accurately show device performance. Further we describe extraction of relevant parameters of these circuits for usage in synthesis tools and compare our standard cells to a similar 180nmSOI technology. Afterwards we perform timing analysis for a full adder and explore the boundaries of our device with a larger cryptographic accelerator core. |
| Databáze: | OpenAIRE |
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