A Test Circuit for Extremely Low Gate Leakage Current Measurement of 10 aA for 80 000 MOSFETs in 80 s
| Autor: | Tadahiro Ohmi, Yuki Kumagai, Tomoyuki Suwa, Rihito Kuroda, T. Inatsuka, Akinobu Teramoto, Shigetoshi Sugawa |
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| Rok vydání: | 2013 |
| Předmět: |
Accuracy and precision
Materials science business.industry Transistor Electrical engineering Gate leakage current Hardware_PERFORMANCEANDRELIABILITY Condensed Matter Physics Thermal conduction Industrial and Manufacturing Engineering Electronic Optical and Magnetic Materials law.invention Hardware_GENERAL law Electric field MOSFET Hardware_INTEGRATEDCIRCUITS Gate driver Electrical and Electronic Engineering business Hardware_LOGICDESIGN Leakage (electronics) |
| Zdroj: | IEEE Transactions on Semiconductor Manufacturing. 26:288-295 |
| ISSN: | 1558-2345 0894-6507 |
| Popis: | We discuss the measurement accuracy of the test circuit, which can evaluate statistical characteristics of gate leakage current of small area metal-oxide-semiconductor field-effect transistors (MOSFETs) in a very short time. The accuracy and precision of the gate leakage current obtained by the test circuit are verified for a wide range. As a result it is confirmed that very accurate gate current of 10-17 A ±10% is able to be measured with this method. Using this test circuit, we can evaluate the gate leakage current at a wide electric field range, which is important in discussing the conduction mechanism of gate leakage current. |
| Databáze: | OpenAIRE |
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