Dependence of carrier concentrations on oxygen pressure for Ga-doped ZnO prepared by ion plating method
| Autor: | Kiyoshi Awai, Sho Shirakata, Toshiyuki Sakemi, Tetsuya Yamamoto |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Chemistry
Ion plating Doping Metals and Alloys Analytical chemistry Surfaces and Interfaces Substrate (electronics) Partial pressure Surfaces Coatings and Films Electronic Optical and Magnetic Materials Electrical resistivity and conductivity Materials Chemistry Transmittance Electrical conductor Oxygen pressure |
| Zdroj: | Thin Solid Films. :439-442 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2003.10.138 |
| Popis: | Transparent and conductive Ga-doped ZnO films have been deposited at a glass substrate temperature of 200 °C using an ion plating system. The resistivity as low as 2.7×10−4 Ω cm with a high carrier concentration of 8×1020 cm−3, Hall mobility of 27 cm2 (V s)−1 and high average transmittance above 90% in the visible range were obtained from the film deposited under reducing conditions using ZnO:Ga2O3 tablets with a Ga2O3 content of 3 wt.%. Under reducing conditions, carrier concentration decreases very slowly with increasing oxygen partial pressure. Excess oxygen partial pressure substantially decreases both carrier concentration and Hall mobility in the films. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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