Degradation of the characteristics of p/sup +/ poly MOS capacitors with NO nitrided gate oxide due to post nitrogen annealing

Autor:	Akinobu Teramoto, M. Sekine, Satoru Kawazu, Kiyoteru Kobayashi, Hidetoshi Koyama, M.K. Mazumder
Rok vydání:	1997
Předmět:	Materials science Silicon Annealing (metallurgy) Analytical chemistry chemistry.chemical_element Trapping Nitrogen law.invention Capacitor chemistry Gate oxide law Electronic engineering Boron Nitriding
Zdroj:	1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319).
DOI:	10.1109/irws.1997.660311
Popis:	Summary form only given. Wet oxides annealed in NO ambient for two different temperatures and degradation due to post N/sub 2/ annealing on the characteristics of p/sup +/ poly MOS capacitors have been investigated. Results show that samples with N/sub 2/ post annealing at 900/spl deg/C have a large increase in leakage current and charge trapping compared with samples without N/sub 2/ post annealing. Although NO annealing improves the SiO/sub 2/-Si interface, post annealing in N/sub 2/ at a high temperature of 900/spl deg/C for 30 minutes may diffuse boron from the p/sup +/ poly to the gate oxide, and hence degrades the characteristics of p/sup +/ poly Si gate oxide.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6e10fcbb7b4cf56aee1eb7c3944ffda3 https://doi.org/10.1109/irws.1997.660311 Zobrazit plný text záznamu