Intermixing produced by ion implantation: Case of II–VI semiconductor multilayers

Autor:	J. Fontenille, A. Hamoudi, E. Ligeon, G. Bérard, Joel Cibert, A. C. Chami, K. Khalal
Rok vydání:	1995
Předmět:	Materials science business.industry Analytical chemistry General Physics and Astronomy Molecular physics Crystallographic defect Fluence Cadmium telluride photovoltaics Ion Semiconductor Ion implantation Vacancy defect business Quantum well
Zdroj:	Journal of Applied Physics. 78:3706-3713
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.359949
Popis:	II–VI semiconductor multilayers, containing a quantum well (ZnTe/CdTe/ZnTe or Cd0.6Hg0.4Te/HgTe/CdTe) have been implanted with Zn+ or Cd+ ions at different fluences and temperatures, and analyzed by Rutherford backscattering spectroscopy and channeling. Direct backscattering of channeled ions (He+) experiments show that the density of crystalline defects in the well increases with the fluence and the temperature of implantation, and confirms that layer intermixing takes place. A model has been used to link the accumulation of defects to vacancy trapping in the region where the vacancy free enthalpy is minimized; it happens that in the cases under study this trapping corresponds to a decrease of the elastic energy of the strained layer. Intermixing rules have also been analyzed.
Databáze:	OpenAIRE
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